| PART |
Description |
Maker |
| 64M16 256M4 |
1Gb: x4, x8, x16 DDR3 SDRAM
|
Micon Design Technology Corporation
|
| H5TQ1G63DFRG7J H5TQ1G63DFRG7L H5TQ1G63DFRH9I H5TQ1 |
1Gb DDR3 SDRAM
|
Hynix Semiconductor
|
| K4B1G1646C-ZCG9 K4B1G0846C-ZCG9 K4B1G0446C-ZCG9 |
1Gb C-die DDR3 SDRAM Specification
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K4B1G1646C |
1Gb C-die DDR3 SDRAM Specification
|
Samsung semiconductor
|
| K4B1G0446D |
1Gb D-die DDR3 SDRAM Specification
|
Samsung semiconductor
|
| HY5PS1G831CFP-Y5 HY5PS1G831CLFP-Y5 HY5PS1G1631CFP- |
1Gb DDR2 SDRAM 1G DDR2内存
1Gb DDR2 SDRAM 64M X 16 DDR DRAM, 0.5 ns, PBGA84
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
| W3EG72125S335AJD3 W3EG72125S202JD3 W3EG72125S263AJ |
1GB - 2x64Mx72 DDR SDRAM REGISTERED ECC w/PLL 1GB 2x64Mx72 ECC的DDR SDRAM的注册瓦锁相
|
Amphenol, Corp.
Toshiba, Corp.
|
| HYS72D128521GR-7-B HYS72D64500GR-8-B HYS72D128520G |
DDR SDRAM Modules - 512MB (64Mx72) PC2100 1-bank
DDR SDRAM Modules - 1GB (128Mx72) PC2100 1-bank
DDR SDRAM Modules - 256MB (32Mx72) PC2100 1-bank
256 MB 32M x 72 PC2100 Registered DIM...
DDR SDRAM Modules - 1GB (128Mx72) PC2100 2-2-2 2-bank
Registered DDR SDRAM-Modules
Low Profile Registered DDR-I SDRAM-Modules
|
INFINEON[Infineon Technologies AG]
|
| HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM
4Mx16|3.3V|4K|H|SDR SDRAM - 64M
x16 SDRAM x16内存
|
Hynix Semiconductor
TT electronics Semelab, Ltd.
|
| EDJ1108DJBG-JS-F EDJ1116DJBG-JS-F EDJ1116DJBG-DJ-F |
Differential clock inputs
1G bits DDR3 SDRAM
1G bits DDR3 SDRAM
|
Elpida Memory
|
| HY5PS1G431LF-C4 HY5PS1G431LF-C5 HY5PS1G831LF-C4 HY |
1Gb DDR2 SDRAM 256M X 4 DDR DRAM, 0.45 ns, PBGA68
1Gb DDR2 SDRAM 128M X 8 DDR DRAM, 0.45 ns, PBGA68
1Gb DDR2 SDRAM 256M X 4 DDR DRAM, 0.5 ns, PBGA68
|
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
|
